露光装置:PPS-8200p1/8300p1
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Supports a wide variety of applications.

Compatible with 6/8/12 inch lithography for WL-CSP, IGBT, CIS, etc.

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  • Broadband exposure (automatic switching ghi line, gh line, i line linked to the recipe).
  • Variable NA function (0.16 and 0.1 variable).
  • Reticle design format for up to 8 fields.
  • Optics protected from resist outgassing and chemicals in the surrounding environment.
 
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Video

Repeat product videos for related systems

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Product specification

Product specification

Model type PPS-8200p1/8300p1
Wafer Size 6/8/12 inches
Resolution 2.0 µmL/S (2.0 µm resist thickness)
NA (numerical aperture) 0.16, 0.1 variable
Reduction ratio 1:1
Field Size 52mm × 33mm
Exposure wavelength ghi-line gh-line i-line (recipe linked)
Reticle Size 6inch
Total Overlay Accuracy ≦0.5 µm(|Ave|+3σ)
System Size/Weight (W)2,260×(D)3,460×(H)2,500mm / 5,500kg
Main Options Backside Alignment System
Wafer Peripheral Exposure System
Wafer peripheral non-exposure system
Thin wafer transfer system
GEM communication support
Inline support

 

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